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Award Information
Proposal Number: 0621057
Proposal Title: Metal-Insulator-Semiconductor Gallium Nitride Detector
Topic Number: H-SB06.2-007
Phase: Phase I
Topic Title: HIGH QUANTUM EFFICIENCY FAST DETECTORS FOR THE READOUT OF SCINTILLATORS FOR GAMMA RAY DETECTION
Organization: Physical Optics Corporation
Address: 1845 West 205th Street
Torrance, CA 90501-1510  
Abstract: In response to the HSARPA need for the development of high quantum efficiency, fast photon counting detectors to read UV/visible light emitted by scintillators under gamma radiation, Physical Optics Corporation (POC) proposes to develop a new Metal-Insulator-Semiconductor Gallium Nitride (MISGaN) detector that will have high sensitivity in the UV region for use with cerium-doped crystal scintillator materials for gamma radiation detection. The solid-state, time-gated MISGaN will operate at lower voltage, have high sensitivity in the UV/blue region, cover a much larger area (3-5 in.) and be producible with a lower cost than vacuum photomultiplier tube (PMT) detectors, and will be rugged and shock and magnetic field insensitive. In Phase I POC will build and test a prototype based on commercially available GaN layers on 2 in. wafer substrates to show the advantages of MISGaN over PMTs. The Phase II MISGaN prototype will be fabricated on a base of 4-5 in. wafers. Complete detectors will be assembled with a charge sensitive amplifier. Readout electronics will be assembled at POC with detectors in a portable housing, and the engineering prototype will be demonstrated at POC facilities with a Ce-doped scintillator and test gamma source.
Award/Contract Number: HSHQDC-07-C-00043
Period of Performance: 04/01/2007 - 09/30/2007
Award/Contract Value: $150,000.00
Award/Obligated Amount: $150,000.00